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Growth of Cd0.96Zn0.04Te single crystals by vapor phase gas transport method

Publish Year: 1385
Type: Journal paper
Language: English
View: 389

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Document National Code:

JR_PSI-6-1_009

Index date: 20 January 2019

Growth of Cd0.96Zn0.04Te single crystals by vapor phase gas transport method abstract

Cd0.96Zn0.04Te crystals were grown using vapor phase gas transport method (VPGT). The results show that dendritic crystals with grain size up to 3.5 mm can be grown with this technique. X-ray diffraction and Laue back-reflection patterns show that dendritic crystals are single-phase, whose single crystal grains are randomly oriented with respect to the gas-transport axis. Electrical measurements, carried out using Van der Pauw method, show that the as-grown crystals have resistivity of about 104 : cm and ntypeconductivity

Growth of Cd0.96Zn0.04Te single crystals by vapor phase gas transport method Keywords:

semiconductors , crystal growth , Cd0.96Zn0.04Te , vapor phase gas transport

Growth of Cd0.96Zn0.04Te single crystals by vapor phase gas transport method authors

Sh Tabatabai Yazdi

Department of Physics, Ferdowsi University of Mashhad, Mashhad, Iran

M R Alinejad

Department of Physics, Ferdowsi University of Mashhad, Mashhad, Iran

N Tajabor

Department of Physics, Ferdowsi University of Mashhad, Mashhad, Iran