Analysis and Simulation of Noise Effect in Carbon Nanotubes Transistors with Dielectric Constants vacuum and SiO2

The rapid growth of the technology of electronic circuits manufacturing and entry into the boundary of nanotechnologyalong with the unexpected benefits of this technology, put enormous challenges on the part of the electronics industry ofexperts. In the electronic circuits, there are not always all the noise, and each one appears according to the type ofcircuit that it is possible to ignore some of the noise due to the low frequency. In this research, our goal is to analyzeand simulate Flicker noise of carbon nanotube transistors. The basis of our analytic work is the use of the nonequilibriumGreen s function method and the Green function solves the Schrödinger equation in non-equilibriumconditions. To obtain the self-consistent potential and charge density, Poisson s equations and transitions are used whichafter obtaining the optimal potential value, the flow would be based on the potential. After obtaining the current usingFlicker noise relations, the carbon nanotube transistor noise is obtained. In this simulation, the diameter and length ofcarbon nanotubes have been fixed, and the dielectric constant and the thickness of the oxidizing gate have beenconsidered. To do this, we first performed simulations for carbon nanotube effects transistors on oxidizing gate with adielectric constant of 1 and 3.9, and then we simulated and analyzed each oxidation in different thicknesses. It ispredicted to reduce the dielectric constant and the thickness of the oxidation gate of Flicker noise, as the probability oftrapping the carrier decreases. Finally, it will be determined which oxidizing gate has less noise due to its flicker noise.

Keywords:

carbon nanotube , transistor , noise , oxidizing gate