Performance Comparison of blue InGaN Laser Diodes with Different Waveguide Structures
Publish Year: 1397
Type: Conference paper
Language: English
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Document National Code:
TECCONF04_070
Index date: 21 September 2019
Performance Comparison of blue InGaN Laser Diodes with Different Waveguide Structures abstract
In this study, the waveguide structure effects on the 400 nm InGaN/InGaN semiconductor laser performance is compared. The conventional and new structures are theoretically investigated by using simulation software PICS3D which self- consistently combines 3D simulation of carrier transport, self-heating and optical wave-guiding. Excellent agreement between simulation results and experimental findings is obtained by careful adjustment of material parameter in physical model. Simulation results show that removing electron blocking layer in conventional structure causes to improving electrical and optical laser performance, but laser temperature distribution does not change significantly.
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Performance Comparison of blue InGaN Laser Diodes with Different Waveguide Structures authors
Zahra Danesh Kaftroudi
Department of Engineering sciences, Faculty of Technology and Engineering East of Guilan, University of Guilan,Rudsar-Vajargah, Iran