triplexers based on SOI constructed by three similar resonance cavities

Here we reported capable ultra-compact optical triplexer on silicon-on-insulator substrate with resonance cavity for an application of optical communication network. Three cavities are used which can separate three communication wavelengths 1.31, 1.445 and 1.55µm. Proposed triplexer has the very low cross talk of −25 to −50dB. Total foot print of structure 28.4µm2 designed that offers strong transverse confinementoflightandispromisingcandidatesforphotonic integrated circuits such as wavelength division multiplexing, optical communication and compatible with complementary metal–oxide– semiconductor -Si fabrication processes

triplexers based on SOI constructed by three similar resonance cavities Keywords:

Silicon-on-insulator , Photonic crystal , Triplexer , CMOS-compatible photonic , VDM communication ,