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فیلتر نتایج
Majid Aghababaei
نتایج 31 تا 40 از مجموع 43
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Journal Paper
Design and Fabrication of a 911 GHz Balanced Low Noise Amplifier Using HJFET
Authors:
Reza Bahadori-Nezhad
،
Zaker Hossein Firouzeh
،
Zahra Zeinadini
Year 1393
Publish place:
Journal of Communication Engineering Issue 2، Vol 3
Pages:
18
| Language: English
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Journal Paper
Performance Analysis of Reversible Sequential Circuits Based on Carbon NanoTube Field Effect Transistors (CNTFETs)
Authors:
Maryam Shaveisi
،
Abbas Rezaei
Year 1397
Publish place:
Journal of Electrical and Computer Engineering Innovations Issue 2، Vol 6
Pages:
12
| Language: English
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Journal Paper
Field effect transistor nanobiosensors: State-of-the-art and key challenges as point of care testing devices
Authors:
M. Molaie
Year 1395
Publish place:
Nanomedicine Journal Issue 2، Vol 3
Pages:
14
| Language: English
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Conference Paper
Multi-Input Fuzzy Min/Max Circuits Based on Carbon Nanotube FETs
Authors:
Ali Bozorgmehr
،
Mohammad Hossein Moaiyeri
،
Keivan Navi
Year 1397
Publish place:
The Third International Conference on Intelligent Decision Science
Pages:
6
| Language: English
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Conference Paper
Investigation of the performance and characteristics of linear dopedTunneling carbon nanotube field effect transistor
Authors:
Najmeh Valed Karimi
،
Yaghoub Pourasad
Year 1396
Publish place:
National Congress on Chemistry and nano-chemistry, from research to national development
Pages:
9
| Language: English
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Conference Paper
A new design full adder based-CNTFET with low power consumption and high-speed
Authors:
Sobhan Sheykhivand
،
Ali Naderi Saatlo
،
Sholeh Alaei
Year 1395
Publish place:
Pages:
10
| Language: English
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Conference Paper
Tunnel Field-Effect Transistors: Steeper Switching and Low off Current (IOFF) for Ultra Low Power Applications
Authors:
Saeid jafari
،
Kavoos Sarkari
،
Majid Aghababaei
Year 1395
Publish place:
4th National Congress of Electrical and Computer Engineering of Iran
Pages:
15
| Language: English
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Journal Paper
A Low-Power and Low-Energy 1-Bit Full Adder Cell Using 32nm CNFET Technology Node
Authors:
Meysam Mohammadi
،
Yavar Safaei Mehrabani
Year 1395
Publish place:
Journal of Advances in Computer Research Issue 2، Vol 7
Pages:
12
| Language: English
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Journal Paper
Symmetrical, Low-Power, and High-Speed 1-Bit Full Adder Cells Using 32nm Carbon Nanotube Field-effect Transistors Technology
Authors:
M.H. Shafiabadi
،
Y. Safaei Mehrabani
Year 1394
Publish place:
International Journal of Engineering (IJE) Issue 10، Vol 28
Pages:
8
| Language: English
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Conference Paper
A novel high frequency and high breakdown voltage SOI MESFET by modified DC and radio frequency characteristics
Authors:
Hadi Shahnazarisani
،
Gholam A. Asghari
Year 1394
Publish place:
International Conference on New Research Findings in Electrical Engineering and Computer Science
Pages:
17
| Language: English
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نتایج 31 تا 40 از مجموع 43
1
2
3
4
5