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فیلتر نتایج
نتایج 1 تا 10 از مجموع 24
1
2
3
Conference Paper
A comparative Study on Ridge Waveguide Laser Diode with Single GaAs Quantum Well
Authors:
Zahra Danesh Kaftroudi
Year 1402
Publish place:
5th International Conference on Software Computing
Pages:
5
| Language: English
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Journal Paper
Non-radiative Auger Current in a InGaN/GaN Multiple Quantum Well Laser Diode under Hydrostatic Pressure and Temperature
Authors:
Rajab Yahyazadeh
،
Zahra Hashempour
Year 1402
Publish place:
Journal of Optoelectronical Nanostructures Issue 2، Vol 8
Pages:
27
| Language: English
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Journal Paper
Effect of Hydrostatic Pressure on Optical Absorption Coefficient of InGaN/GaN of Multiple Quantum Well Solar Cells
Authors:
Rajab yahyazadeh
،
zahra hashempour
Year 1400
Publish place:
Journal of Optoelectronical Nanostructures Issue 2، Vol 6
Pages:
22
| Language: English
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Journal Paper
Enhancement of deep violet InGaN double quantum wells laser diodes performance characteristics using superlattice last quantum barrier
Authors:
Maryam Amirhoseiny
،
Ghasem Alahyarizadeh
Year 1400
Publish place:
Journal of Optoelectronical Nanostructures Issue 2، Vol 6
Pages:
14
| Language: English
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Journal Paper
Time Response of a Resonant Tunneling Diode Based Photo- Detector (RTD-PD)
Authors:
Mohamad Ahmadzadeh
،
Abbas Ghadimi
،
Seyed Ali Sedigh Ziabari
Year 1400
Publish place:
Journal of Optoelectronical Nanostructures Issue 1، Vol 6
Pages:
24
| Language: English
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Journal Paper
Numerical Modeling of Electronic and Electrical Characteristics of ۰.۳ ۰.۷ Al Ga N / GaN Multiple Quantum Well Solar Cells
Authors:
Rajab yahyazadeh
،
zahra hashempour
Year 1399
Publish place:
Journal of Optoelectronical Nanostructures Issue 3، Vol 5
Pages:
21
| Language: English
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Journal Paper
Analysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar Transistor Laser
Authors:
ashkan horri
،
Seyedeh Zahra Mirmoeini
Year 1399
Publish place:
Journal of Optoelectronical Nanostructures Issue 2، Vol 5
Pages:
14
| Language: English
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Journal Paper
Effect of variation of specifications of quantum well and contact length on performance of InP-based Vertical Cavity Surface Emitting Laser (VCSEL)
Authors:
Abbas Ghadimi
،
Mohamad Ahmadzadeh
Year 1399
Publish place:
Journal of Optoelectronical Nanostructures Issue 1، Vol 5
Pages:
16
| Language: English
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Journal Paper
Effect of hydrostatic pressure on the Auger recombination rate of InGaN/GaN multiple quantum well laser diode
Authors:
رجب یحیی زاده صدقیانی
،
زهرا هاشم پور
Year 1401
Publish place:
The Journal of Interfaces, Thin Films and Low dimensional systems Issue 1، Vol 6
Pages:
12
| Language: English
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Journal Paper
Theoretical study of ISB conduction optical absorption and impurity binding energy associated with lowest excited states in QW with a new modulated potential
Authors:
Redouane En-nadir
،
Haddou El-ghazi
Year 1402
Publish place:
Journal of Theoretical and Applied Physics Issue 2، Vol 17
Pages:
13
| Language: English
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نتایج 1 تا 10 از مجموع 24
1
2
3