فیلتر نتایج
نتایج 1 تا 10 از مجموع 14
Conference Paper
Enhancing SOI MESFET Performance through Gate Electrode Shifting and Optimization Using Nickel and Oxide Layers
Authors: Ahmad Ghiasi
Year 1403
Publish place: The 7th International Conference on Electrical Engineering, Computer, Mechanics and Artificial Intelligence
Pages: 14 | Language: English
Conference Paper
Novel Hetero Material-based Charge Plasma TFET (H-CPTFET)
Authors: Saeid Marjani
Year 1402
Publish place: The 7th International Conference on Global Studies in Computer, Electrical, and Mechanical Engineering
Pages: 7 | Language: English
Journal Paper
Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor
Authors: Mahsa Roohy، Reza Hosseini
Year 1398
Publish place: Journal of Optoelectronical Nanostructures Issue 2، Vol 4
Pages: 16 | Language: English
Journal Paper
Simulation of the Process of LDMOS Transistor Manufacture and Optimizing it to Increase the Current of Work
Authors: Payman Bahrami، Mohammad Reza Shayesteh، Mohammad Eslami
Year 1396
Publish place: majlesi Journal of Electrical Engineering Issue 4، Vol 11
Pages: 7 | Language: EnglishJournal Paper
Sharp Roll-Off Ultra Wide Stopband Compact Microstrip Lowpass Filter Using Square-Shaped Resonator
Authors: Behnam Afzali، Farshid Yousefi Moghadam، Farshad Nadi، Rohallah Zallbeygi
Year 1398
Publish place: majlesi Journal of Electrical Engineering Issue 2، Vol 13
Pages: 7 | Language: EnglishJournal Paper
Body Current Optimization Using Threshold-Voltage-Adjust-Implant Engineering in ۴۵nm SOI MOSFET
Authors: Arash Daghighi، Abdollah KhalilZad
Year 1400
Publish place: majlesi Journal of Electrical Engineering Issue 4، Vol 15
Pages: 5 | Language: English
Journal Paper
Design and Realization of a Junction-less TFET for Analog and Digital Applications Based on Strain Engineering
Authors: Fayzollah Khorramrouze، Seyed Ali Sedigh Ziabari، Ali Heydari
Year 1401
Publish place: Telecommunication devices Issue 2، Vol 11
Pages: 8 | Language: English
Journal Paper
Band bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
Authors: Ali Naderi، Behrooz Abdi Tahne
Year 1396
Publish place: International Journal of Nano Dimension Issue 4، Vol 8
Pages: 10 | Language: English
Journal Paper
Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs
Authors: - -، - -، - -
Year 1398
Publish place: Journal of Electrical and Computer Engineering Innovations Issue 2، Vol 7
Pages: 8 | Language: English
Journal Paper
تاثیر فشار و دما بر ترانزیستورهای اثر میدان با تحرک بالای الکترونی AlGaN/GaN
Authors: Rajab Yahyazadeh
Year 1398
Publish place: The Journal of Interfaces, Thin Films and Low dimensional systems Issue 2، Vol 2
Pages: 12 | Language: English
نتایج 1 تا 10 از مجموع 14