Optimization of Quantum Well Structure to Enhance Output Power for an AlGaAs-Based Laser Diode

The high power and low threshold current 730-810 nm AlGaAs/ AlGaAs quantum well lasers with separate confinement heterostructures waveguide structure are theoretically designed using simulation software PICS3D. The simulator self-consistently combines 3D simulation of carrier transport, self-heating, and optical waveguiding. Through the simulation, the thermal performance of laser diodes with different quantum well structures are studied to increase output power and decrease threshold current of the proposed device. In this study, Al composition of AlxGa1−xAs, number and thickness of quantum well are varied and the results are investigated. Numerical results confirm that the active region consists of 2 quantum wells with Al0.08Ga0.92As material compound and 4 nm thicknesses can be considered as the optimal structure.

Keywords:

AlGaAs/ AlGaAs laser diode , Quantum well , Simulation , Power , Threshold current , PICS3D.