Characteristics of 2D nanodot-array Single Electron Transistors

In this paper, we present a two-dimensions-array multi-island single-electron transistor (2D-MISET) model based on the orthodox theory and solving the master equation. Using SIMON simulator, we investigate the electrical characteristics of single-electron transistors (SETs) based on multiple islands and show the temperature dependence of the Coulomb oscillation of the SET with one to 5x5 islands as a function of gate voltage Vg in the temperature range from T=5 to 50K. Values of current tend to increase propor/onally with temperature. For a high drain voltage, the device behaved as a single-island device. This is probably because the multiple islands were electrically enlarged and merged into a single island owing to the high applied drain voltage. Finally, we compare the advantages of 2D MISET face to single-island SETs with identical dimensions of islands.

Keywords:

SET , SIMON , MISET , Orthodox theory , Coulomb oscillation