The study of deposition parameters on the growth of silicon dioxide films deposited on InSb by plasma enhanced chemical vapor deposition method

In this paper we report the growth and characterization of silicon dioxide films depositedon<111>InSb(B-face).The high performance Au/Cr/SiO2/InSb/Au metal-insulatorsemiconductor was fabricated by evaporation of metals in vacuum.The effects of N2O/SiH4 flow rate, deposition pressure and SiH4 gas flow rate on deposition rate, etch rate and uniformity of silicon dioxide films were investigated. The C-V results show that at 77 K MIS structure there are positive charges in the silicon dioxide films and interface .The dielectric constant and refractive index of PECVD deposited films was compared with dielectric constant and refractive index of thermally grown films.

Keywords:

PECVD , SiH4 , Etch Rate , Deposition Rate , Dielectric Constant