Observation Mexican-hat in the strained monolayer MSb (M = C, Si, Ge and Sn)

In this work, the electrical properties of MSb (M = C, Si, Ge and Sn) monolayers are investigated. The electrical properties such as effective mass, deformation potential and mobility of these monolayers along both zigzag and armchair directions are studied. In this compounds, the hole in the valence band demonstrates a higher mobility respect to electron. We find that these compounds show a Mexican-hat dispersion at the top of valence for large tensile strain. The Mexican-hat energy and coefficient are explored for various strains

Keywords:

Monolayer , Electronic Properties , DFT , Mexican-hat