Enhanced Dielectric Properties in Bismuth Titanate Ceramics with CuO Sintering Aid
Publish place: 10th International Conference on Materials Science & Metallurgical Engineering (iMat2021)
Publish Year: 1400
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
IMES15_151
تاریخ نمایه سازی: 13 بهمن 1400
Abstract:
Bismuth titanate (Bi۴Ti۳O۱۲) is a prominent member of bismuth oxide layer structure ferroelectrics. Bi۴Ti۳O۱۲ is a potential candidate for high-temperature applications due to its high Curie temperature. In this study, Bi۴Ti۳O۱۲ ceramic was synthesized using the solid state reaction method. The effects of ۰.۵ mol% CuO as sintering aid on the microstructure and dielectric properties were investigated. It was found that the use of CuO led to the enhanced densification of Bi۴Ti۳O۱۲ ceramic and obtained high density ceramic. The random orientation of grains was reduced and the grain shape change from plate-like to needle-shape in the sample including CuO. The results indicated that the addition of CuO increased the dielectric constant and decreased the dielectric loss of BIT ceramic.
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Authors
Hajar Ahmadimoghadam
Assistant Professor, Department of Materials Science and Engineering, School of Engineering, Shahrekord University, Shahrekord, Iran