Radiation Reduction in the Axon-Hillock Neuromorphic Circuit

Nowadays, implementing neuromorphic circuits, the main goal of which is to mimic neuron behavior, has drawn attention. The aim of the present research is to design robust neuromorphic circuits for environments exposed to radiation. After research samples were examined in radiation laboratories, it was found out that radiation causes a change in the threshold voltage of MOSFET transistors. Accordingly, the parameters of the neuromorphic axon-hillock circuit were measured before and after exposure to radiation. According to the results, the presence of radiation causes a change in the threshold voltage of this transistor and increases the short-circuit current in the circuit, leading to an increase in the dynamic power consumption. Hence, using techniques for reducing the short-circuit current and adding a transistor to the circuit led to a decrease in the short-circuit current. All the simulations were performed in HPSICE software.

Keywords:

neural network , neuromorphic , radiation , MOSFET