Time-Dependent Instability of Threshold Voltage Mechanisms in p-Gan Gate AlGaN/Gan HEMTs under High Reverse Bias Conditions

the abstract of this research study delves into the examination of a fascinating phenomenon. The researchers aim to explore and understand the phenomenon, focusing on its various aspects and characteristics. Through meticulous investigation and analysis, the study aims to shed light on this topic and provide valuable insights. The abstract introduces the study's objectives, giving readers a glimpse into the intriguing world that surrounds the phenomenon. It promises to be an engaging and thought-provoking research study, sure to captivate the interest of college students and researchers alike. In this article, we investigate the degradation mechanisms of Gan high-electron mobility transistors (HEMTs) with p-type gate during long-term high-temperature reverse bias (HTRB) stress and negative bias temperature instability (NBTI) stress. Through a series of stress/recovery experiments, we show that HTRB stress can cause hole emission in the p-Gan layer, resulting in a positive shift in threshold voltage (Vth), while NBTI stress can lead to detrapping at the AlGaN/Gan interface or the AlGaN layer, causing a negative shift in Vth. We also observe that the temperature rise can suppress the positive Vth shift and accelerate its recovery process in HTRB experiments.

Keywords:

Bias Conditions , Voltage Instability , High-temperature reverse bias (HTRB) , hole emission , negative bias temperature instability (NBTI) , p-Gan , threshold voltage