A Dynamic Simulation on Single Gate Junctionless Field EffectTransistor Based on Genetic Algorithm
Publish Year: 1393
Type: Journal paper
Language: English
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JR_ACSIJ-3-5_019
Index date: 3 November 2014
A Dynamic Simulation on Single Gate Junctionless Field EffectTransistor Based on Genetic Algorithm abstract
We study the I-V characteristics of single gate junctionless fieldeffect transistor by device simulation. The sample FET issimulated at different channel lengths and the I-V curve changesdue to variations of and channel length have been systematicallyanalyzed. The new approach exhibited here utilizes a GeneticAlgorithm to select the important physical and heuristic elementsin order to define a compact yet precision model for Single GateJunctionless Field Effect Transistor characteristic. The resultsshow that the mean absolute percent error (MAPE), root-meansquaredeviation (RMSD) and standard deviation error (SDE)were at an acceptable level
A Dynamic Simulation on Single Gate Junctionless Field EffectTransistor Based on Genetic Algorithm Keywords:
A Dynamic Simulation on Single Gate Junctionless Field EffectTransistor Based on Genetic Algorithm authors
Roya Noran
Department of Electrical Engineering, Khorasan Institute of Higher Education UniversityMashhad, Khorasan Razavi, Iran