Analysis and Modeling of the Effect of Statistical Fluctuations on (6T) nano-CMOS SRAM Cell Stability
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Publish Year: 1393
Type: Conference paper
Language: English
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TDCONF01_113
Index date: 10 July 2015
Analysis and Modeling of the Effect of Statistical Fluctuations on (6T) nano-CMOS SRAM Cell Stability abstract
Static RAM cells are among the most important fundamental blocks of digital circuits. These cells go through considerable statistical fluctuations as a result of scale change of the bulk-CMOS technology to nanometer scales. This scale change is aimed to increase data storage density.It also influences static RAM stability significantly[1, 2]. In this research, the statistical sensitivity of static noise margin was analyzed in non-ideal conditions and the statistical stability of SRAM cells was examined to recognize weak cells
Analysis and Modeling of the Effect of Statistical Fluctuations on (6T) nano-CMOS SRAM Cell Stability Keywords:
Analysis and Modeling of the Effect of Statistical Fluctuations on (6T) nano-CMOS SRAM Cell Stability authors
H Tasdighi
Department of Electrical and Computer Engineering, University of Kashan, Kashan, Iran
D Dideban
Institute of Nanoscience and Nanotechnology, University of Kashan, Iran
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