A New Circuit Simulation for Separate Absorption, Charge and Multiplication Avalanche Photodiode (SACM-APD) Including Nonuniformity of the Electric Field in Active Region

In this paper, we present a circuit model for separate absorption, charge and multiplication avalanche Photodiode (SACM-APD). In this circuit modelling we consider the nonuniformity of electric field using split-step method in active region. This circuit model is based on the carrier rate equations in the different regions of the device. Using the model we obtain the photocurrent, quantum efficiency, and dark current. As an example,an InGaAs/InAlAs SACM-APD's is simulated. There is a good agreement between the simulation and experimental results.

Keywords:

Avalanche Photodiode , Rate Equation , Split-step Method , Circuit Model