Geometrical Averaging versus Arithmetical Averaging in Tunneling Field Effect Transistor Based on Armchair Graphene Nanoribbon with Surface Roughness Disorders
Publish place: Fifth International Conference on Quality Research in Electrical and Mechatronics Electrical Engineering
Publish Year: 1397
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ELEMECHCONF05_069
تاریخ نمایه سازی: 21 خرداد 1398
Abstract:
The electrical characteristics of tunneling field effect transistors based on armchair edge graphene Nano ribbon in the presence of surface roughness scattering is studied. Self-consistent atomistic simulations based on the nonequilibrium Green s function formalism are used. A tight-binding model is used to modulate the electronic properties. Current distribution function in the presence of surface roughness is obtained. We show the current distribution function is log-normal Gaussian distribution. In the following, Creation of mid-gap states due to surface corrugation is explored and the effects of the mid-gap states on the performance of the device is studied. The effect of geometrical and roughness parameters on the ON/OFF ratio, sub-threshold swing and power delay product are investigated.
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Authors
Shoeib Babaee Touski
Department of electrical engineering, Hamedan University of Technology, Hamedan, Iran