Geometrical Averaging versus Arithmetical Averaging in Tunneling Field Effect Transistor Based on Armchair Graphene Nanoribbon with Surface Roughness Disorders

The electrical characteristics of tunneling field effect transistors based on armchair edge graphene Nano ribbon in the presence of surface roughness scattering is studied. Self-consistent atomistic simulations based on the nonequilibrium Green s function formalism are used. A tight-binding model is used to modulate the electronic properties. Current distribution function in the presence of surface roughness is obtained. We show the current distribution function is log-normal Gaussian distribution. In the following, Creation of mid-gap states due to surface corrugation is explored and the effects of the mid-gap states on the performance of the device is studied. The effect of geometrical and roughness parameters on the ON/OFF ratio, sub-threshold swing and power delay product are investigated.

Geometrical Averaging versus Arithmetical Averaging in Tunneling Field Effect Transistor Based on Armchair Graphene Nanoribbon with Surface Roughness Disorders Keywords:

Graphene , Nano ribbon , NEGF , Surface Roughness.