Characterization of the Emitter Contact in Poly-emitter Bipolar Transistors for Extraction of the Series Emitter Resistance
Publish place: Fifth International Conference on Quality Research in Electrical and Mechatronics Electrical Engineering
Publish Year: 1397
Type: Conference paper
Language: English
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Document National Code:
ELEMECHCONF05_272
Index date: 11 June 2019
Characterization of the Emitter Contact in Poly-emitter Bipolar Transistors for Extraction of the Series Emitter Resistance abstract
The nonohmic behavior of the emitter contact in bipolar transistors employing polysilicon emitters has been characterized based on an improved open collector method. Fowler-Nordheim tunneling through a triangular potential barrier is ruled out as the dominant transport mechanism at the polysilicon-emitter interface. A subcircuit-based model explaining the effect of substrate bias on the behavior of the series emitter resistance is evaluated for circuit simulation. Finally, extraction of the emitter resistance in presence of nonlinearity associated with transport at the emitter interface is discussed.
Characterization of the Emitter Contact in Poly-emitter Bipolar Transistors for Extraction of the Series Emitter Resistance Keywords:
Characterization of the Emitter Contact in Poly-emitter Bipolar Transistors for Extraction of the Series Emitter Resistance authors
Shahriar Jamasb
Department of Biomedical Engineering, Hamedan University of Technology, Hamedan, ۶۵۱۶۹-۱۳۷۳۳, Iran