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فیلتر نتایج
نتایج 11 تا 20 از مجموع 42
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Conference Paper
Effect of Mid-Gap States on Performance of Tunneling Field-Effect Transistor Based on Antimonene
Authors:
Hossein N.Niknezhad
،
Shoeib Babaee Touski
Year 1402
Publish place:
3rd Intl. Conf. on Researches in Nanotechnology & Nanoscience
Pages:
10
| Language: English
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Journal Paper
Design and Qualitative Analysis of Hetero Dielectric Tunnel Field Effect Transistor Device
Authors:
S. Howldar
،
B. Balaji
،
K. Srinivasa Rao
Year 1402
Publish place:
International Journal of Engineering (IJE) Issue 6، Vol 36
Pages:
7
| Language: English
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Conference Paper
Workfunction Engineering of Dual Metal Double Gate TunnelField Effect Transistor for Power Relay Application
Authors:
Saeid Marjani
،
Hamid Mousavi
Year 1401
Publish place:
Eighth international Conference on Knowledge and Technology of Mechanical, Electrical Engineering and Computer Of Iran
Pages:
6
| Language: English
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Conference Paper
Tunable VHF Transconductor Using Double-Gate Carbon Nanotube Field Effect Transistors (DG-CNTFETs) and its Application in Gm-C Filters
Authors:
Amir Baghi Rahin
،
Amirsaeed Alijanpour
،
Mohammad Hossein Akhtarzadeh
،
Afshin Kadivarian
،
Vahid Baghi Rahin
Year 1401
Publish place:
8th National Conference on Modern Studies and Resech in Computer, Electrical, and Mechanical Sciences of Iran
Pages:
11
| Language: English
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Journal Paper
Representation of the temperature nano-sensors via cylindrical gate-all-around Si-NW-FET
Authors:
R. Abband Pashaki
،
S. A. Sedigh Ziabari
Year 1394
Publish place:
International Journal of Nano Dimension Issue 4، Vol 6
Pages:
8
| Language: English
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Journal Paper
Gate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)
Authors:
Maryam Faraji
،
Seyed Saleh Ghoreishi
،
Reza Yousefi
Year 1397
Publish place:
International Journal of Nano Dimension Issue 1، Vol 9
Pages:
9
| Language: English
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Journal Paper
Analysis and study of geometrical variability on the performance of junctionless tunneling field effect transistors: Advantage or deficiency?
Authors:
Fayzollah Khorramrouz
،
Seyed Ali Sedigh Ziabari
،
Ali Heydari
Year 1397
Publish place:
International Journal of Nano Dimension Issue 3، Vol 9
Pages:
13
| Language: English
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Journal Paper
Novel attributes of steep-slope staggered type heterojunction p-channel electron-hole bilayer tunnel field effect transistor
Authors:
Zahra Ahangari
Year 1398
Publish place:
International Journal of Nano Dimension Issue 4، Vol 10
Pages:
9
| Language: English
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Journal Paper
Representation of a nanoscale heterostructure dual material gate JL-FET with NDR characteristics
Authors:
Amirreza Bozorgi Golafzani
،
Seyed Ali Sedigh Ziabari
Year 1399
Publish place:
International Journal of Nano Dimension Issue 1، Vol 11
Pages:
6
| Language: English
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Journal Paper
A design of improved nanoscale U-Shaped TFET by energy band modification for high performance digital and analog/RF applications
Authors:
Melisa Ebrahimnia
،
Seyed Ali Sedigh Ziabari
،
Azadeh Kiani-Sarkaleh
Year 1400
Publish place:
International Journal of Nano Dimension Issue 3، Vol 12
Pages:
14
| Language: English
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نتایج 11 تا 20 از مجموع 42
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