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Journal Paper
Numerical optimization of threshold voltage and off-current of a nano-scale symmetric double gate MOSFET based on the genetic algorithm: Various strategies compatible with device applications
Authors:
Yazdan Karimi Pashaki
،
Seyed Ali Sedigh Ziabari
،
Abdollah Eskandarian
،
Ali Rahnamaei
Year 1402
Publish place:
International Journal of Nano Dimension Issue 1، Vol 14
Pages:
12
| Language: English
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Journal Paper
Designing an InGaP/InAlGaP Double Junction Solar Cell without an Anti-Reflection Coating by Adding a New Window Layer in the Upper Junction and Optimizing the Back Surface Field Layer
Authors:
Neda Hasanzadeh Bishegahi
،
Abdollah Eskandarian
،
Abbas Ghadimi
،
Ali Esmaeeli
Year 1402
Publish place:
Journal of Optoelectronical Nanostructures Issue 3، Vol 8
Pages:
23
| Language: English
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Journal Paper
Analysis and Design of High Speed ۴-۲ Compressor in CMOS Technology for High Speed Multipliers
Authors:
Ali Rahnamaei
،
Gholamreza Zare Fatin
،
Abdollah Eskandarian
Year 1397
Publish place:
majlesi Journal of Electrical Engineering Issue 4، Vol 12
Pages:
8
| Language: English
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Journal Paper
Design of a low power high speed ۴-۲ compressor using CNTFET ۳۲nm technology for parallel multipliers
Authors:
Ali Rahnamaei
،
Gholamreza Zare Fatin
،
Abdollah Eskandarian
Year 1398
Publish place:
International Journal of Nano Dimension Issue 1، Vol 10
Pages:
11
| Language: English
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Journal Paper
High speed Radix-۴ Booth scheme in CNTFET technology for high performance parallel multipliers
Authors:
Ali Rahnamaei
،
Gholamreza Zare Fatin
،
Abdollah Eskandarian
Year 1398
Publish place:
International Journal of Nano Dimension Issue 3، Vol 10
Pages:
10
| Language: English
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