A Novel Silicon on Diamond Structure to Improve Drain Induced Barrier Lowering

A novel silicon-on-diamond (SOD) structure to improve drain induced barrier lowering (DIBL) is presented. The electrical field penetration through the buried insulator of diamond degradesthe DIBL. In the new structure, a second, double insulating material, e.g. SiO2 is added on top of the buried insulator andpartially covers the diamond. The second insulating material has lower electrical permittivity. Therefore, the fringing fieldcapacitance is smaller. Simulation results of 22 nm silicon-ondiamondtransistor shows 18% improvement in DIBL comparing with conventional SOD structure. Lattice temperature increase of 5% is observed in the new structure compared with the conventional SOD which is still well below the silicon on insulator junction temperature