Design and Analysis Of Three Full Adder Cells Based on CNTFET Technology
Publish place: Congress on Electrical, Computer and Information Technology
Publish Year: 1392
Type: Conference paper
Language: English
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Document National Code:
CECIT01_786
Index date: 5 September 2013
Design and Analysis Of Three Full Adder Cells Based on CNTFET Technology abstract
Carbon-nanotube field-effect transistors (CNFETs)are becoming promising alternatives to the existing silicon technology due to their excellent electronic and uniquemechanical properties. Since Full-Adder (FA) is an important part of each processor, it is important to design a high performance FA. However the CNFET-based FA cells have more power than CMOS FA. In this paper, three high-speed and low power CNFET based FA cells are proposed fornanotechnology. Significant improvements are achieved in terms of speed, power consumption and PDP (Power-Delay-Product) in comparison with the other classical and state-ofthe- art CMOS and CNFET-based designs, existing in the literatures. The proposed FA cells work properly in low supply voltages
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Design and Analysis Of Three Full Adder Cells Based on CNTFET Technology authors
Rabe’e Sharifi Rad
Sirjan University of Technologhy,kerman, Iran
Elnaz Ghodsvali
Amir Kabir University
Sima sinaei
Tehran University