Low power high gain UWB LNA for 3.1–10.6-GHz with current reused and forward body bias techniques
Publish place: International Conference on New Research Findings in Electrical Engineering and Computer Science
Publish Year: 1394
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
COMCONF01_354
تاریخ نمایه سازی: 8 آذر 1394
Abstract:
A low-power ultra-wideband (UWB) low-noise amplifier (LNA) is proposed exploiting a current-reused and forward body bias techniques operating in the frequency range of 3.1-10.6 GHz. The first stage of the UWB LNA employs a resistive shunt feedback topology in conjunction with a parallel LC load to achieve wideband input matching and low noise figure simultaneously. By incorporating the current reused configuration and forward body bias technique in the second stage, the proposed UWB LNA can operate at reduced supply voltage and power consumption while maintaining high gain, low noise. The proposed LNA is designed for UWB applications using 180 nm TSMC CMOS process. The implemented ultra-wideband LNA presents a minimum power gain of 17.65 dB, a high reverse isolation of −31.5 dB and a good input / output return losses are better than −10.1 dB in the frequency range of 3.1–10.6 GHz. An excellent noise figure (NF) of 2.35–2.58 dB was obtained in the required band with a power dissipation of 5.92 mW under a supply voltage of 1 V. An input-referred third-order intercept point (IIP3) is −18 dBm at 6 GHz.
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Authors
Firoz Hemmati
Electrical Engineering Faculty Sahand University of Technology Tabriz, Iran
Esmaeil Najafi aghdam
Electrical Engineering Faculty Sahand University of Technology Tabriz, Iran
Nima Souzandeh
Electrical Engineering Faculty Sahand University of Technology Tabriz, Iran
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