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A New Circuit Simulation for Separate Absorption, Charge and Multiplication Avalanche Photodiode (SACM-APD) Including Nonuniformity of the Electric Field in Active Region

Publish place: 16th Iranian Conference on Electric Engineering
Publish Year: 1387
Type: Conference paper
Language: English
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Link to this Paper:
https://civilica.com/doc/47783

Document National Code:

ICEE16_285

Index date: 25 February 2008

A New Circuit Simulation for Separate Absorption, Charge and Multiplication Avalanche Photodiode (SACM-APD) Including Nonuniformity of the Electric Field in Active Region abstract

In this paper, we present a circuit model for separate absorption, charge and multiplication avalanche Photodiode (SACM-APD). In this circuit modelling we consider the nonuniformity of electric field using split-step method in active region. This circuit model is based on the carrier rate equations in the different regions of the device. Using the model we obtain the photocurrent, quantum efficiency, and dark current. As an example,an InGaAs/InAlAs SACM-APD's is simulated. There is a good agreement between the simulation and experimental results.

A New Circuit Simulation for Separate Absorption, Charge and Multiplication Avalanche Photodiode (SACM-APD) Including Nonuniformity of the Electric Field in Active Region Keywords:

Avalanche Photodiode , Rate Equation , Split-step Method , Circuit Model

A New Circuit Simulation for Separate Absorption, Charge and Multiplication Avalanche Photodiode (SACM-APD) Including Nonuniformity of the Electric Field in Active Region authors

M. R. Abbasi

Shiraz University

M. H Sheikhi

Shiraz University

A Zarifkar

Iran Telecommunication Research Canter

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