Hybrid domino XOR gate design with low power consumption
Publish place: 2nd International Conference on Electrical Engineering
Publish Year: 1396
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ICELE02_109
تاریخ نمایه سازی: 7 اسفند 1396
Abstract:
XOR gates are the fundamental units which are used in many VLSI applications such as adders and microprocessors, and if we can reduce their power consumption and size, it will results in optimized VLSI chips. In this paper, a domino XOR gate in 45nm technology are presented. By eliminating two input inverters and preventing the pulse flow to the output node during the precharge phase, power consumption in this circuit is reduced
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Authors
Milad Alizadeh
Faculty of Electrical, Biomedical and Mechatronics Engineering, Qazvin Branch, Islamic Azad University, Qazvin,Iran
Sattar Mirzakuchaki
Electrical Engineering Department, Iran University of Science and Technology, Tehran, Iran