Electronic Transport Engineering in GaAs/GaAlAs Aperiodic Semiconductor Superlattices

In this work, the effect of doping concentration is investigated on the band structures of electrons and electrical transmission in typical aperiodic semiconductor superlattices consisting of two quantum well and barrier layers, theoretically. For this reason, we assume that each unit cell of the superlattice contains alternately two types of material GaAs (as a well) and Ga Al As 1−x x (as a barrier) with six sublayers of two materials. Our calculations are based on the generalized Kronig-Penny (KP) model and transfer matrix (TF) method within the framework of the parabolic conductance band effective mass approximation in the coherent regime. The numerical results may be useful in designing nano energy filter devices.

Keywords:

Aperiodic Semiconductor Superlattices , Electrical Transmission , Band Structure Calculation , Transfer Matrix , Kronig-Penny Model