GNRFET-based Voltage Controlled Ring Oscillator Using GDI NAND Gate

Publish Year: 1402
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:

NCEEM12_029

تاریخ نمایه سازی: 30 آبان 1402

Abstract:

In this paper, voltage controlled ring oscillator (VCRO) using graphene nano-ribbon field-effect (GNRFET) is presented. The delay cell in the proposed ring oscillator (RO) is based on two-transistor NAND gate based on the gate diffusion input (GDI) technique. The ۳-stage VCRO was designed based on the delay cell and the voltage controlled oscillator (VCO) structure was realized with ۶-transistors. Based on the simulations performed with HSPICE software in ۱۶ nm MOS-GNRFET technology and with a supply voltage of ۰.۸ V, the oscillation frequency in the ۳-stage oscillator changes with the change of the control voltage in the range of ۱۹.۷۵ GHz to ۱۷۸.۷۱ GHz. The power consumption of the proposed oscillator is low and its maximum power consumption in the range of frequency adjustment is ۱.۳۳ μW. The power-delay product (PDP) was evaluated as a figure of merit in this research and based on the results obtained in the frequency tuning range, the maximum PDP value for the proposed oscillator was ۱.۲۴ aJ. The PDP of the proposed VCRO is extremely low compared to state-of-the-art techniques, making this design suitable for low-power applications and covering frequencies in the high-frequency (HF) range and beyond to the millimeter-wave (EHF) range.

Keywords:

Voltage Controlled Ring Oscillator (VCRO) , Millimeter Wave , GNRFET , GDI Technique , Power Delay Product (PDP).

Authors

Amir Baghi Rahin

Department of Electrical Engineering, Sardroud Branch, IAUT, Tabriz, Iran

Afshin Kadivarian

Department of Electrical Engineering, Science and Research Branch, IAUT, Tehran, Iran

Morteza Dadgar

Department of Electrical Engineering, Sahand University of Technology, Tabriz, Iran