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فیلتر نتایج
Reza Ebrahimi Atani
Majid Aghababaei
Daryoosh Dideban
نتایج 11 تا 20 از مجموع 27
1
2
3
Journal Paper
ارزیابی عملکرد آنالوگ و پارامترهای اثر کانال کوتاه روی ترانزیستور اثر میدان بر پایه عایق توپولوژیک
Authors:
M. Vali
،
D. Dideban
،
N. Moezi
Year 1398
Publish place:
Tabriz Journal of Electrical Engineering Issue 2، Vol 49
Pages:
9
| Language: English
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Journal Paper
Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel
Authors:
Mohammad Karbalaei
،
Daryoosh Dideban
،
Negin Moezi
Year 1398
Publish place:
Journal of Electrical and Computer Engineering Innovations Issue 1، Vol 7
Pages:
8
| Language: English
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Conference Paper
A Novel Leakage Reduction Circuit in Nanoscale Technology
Authors:
Zohre Sharifi
Year 1397
Publish place:
Third National Conference on Computer Engineering, Information Technology and Data Processing
Pages:
5
| Language: English
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Conference Paper
Negative-Capacitance Effects in 2D Double Gate Field-Effect Transistors
Authors:
Manouchehr Hosseini
،
Hamidreza Karami
،
Zahra Sohrabi
Year 1397
Publish place:
3rd International Conference on Electrical Engineering
Pages:
5
| Language: English
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Conference Paper
Tunnel Field-Effect Transistors: Steeper Switching and Low off Current (IOFF) for Ultra Low Power Applications
Authors:
Saeid jafari
،
Kavoos Sarkari
،
Majid Aghababaei
Year 1395
Publish place:
4th National Congress of Electrical and Computer Engineering of Iran
Pages:
15
| Language: English
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Conference Paper
Using of DTMOS Technique at 1-bit Full Adder Cells in Subthreshold Region
Authors:
Manijeh Alizadeh Messgar
،
Behjat Forouzande
Year 1395
Publish place:
The first international conference of modern research engineers in electricity and computer
Pages:
8
| Language: English
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Conference Paper
Design of Two New High-Performance Full Adders in Sub-threshold Region for Ultra-Low Power Applications
Authors:
Ebrahim Pakniyat
،
Seyyed Reza Talebiyan
،
Milad Jalalian Abbasi Morad
،
Farnaz Loghmani
Year 1394
Publish place:
National Conference on Information Technology, Computer & Communication
Pages:
9
| Language: English
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Conference Paper
A Low Power, Variability Resilient 9T-SRAM Cell Operating Stable in Sub and Near-Threshold Regions Using 16nm CMOS technology
Authors:
Mohsen Imani
،
Mohsen Jafari
،
Morteza Fathipour
Year 1392
Publish place:
5th iranian conference on electrical and electronic engineering
Pages:
6
| Language: English
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Conference Paper
A 2.4-GHz Subthreshold Down-conversion Mixer with Improved Noise Figure
Authors:
Maryam Safari
،
Siroos Toofan
،
Leila Bagheriye
Year 1392
Publish place:
21th Iranian Conference on Electric Engineering
Pages:
5
| Language: English
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Conference Paper
Design and Simulation of an Ultra Low-Power Low-Voltage Mixer by using of MOSFET Performance in Subthreshold Region
Authors:
Zahra Ghane Fashtali
،
Mahrokh Maghsoodi
،
Reza Ebrahimi Atani
،
Mehrgan Mahdavi
Year 1391
Publish place:
15th Iranian Student Conference on Electrical Engineering
Pages:
5
| Language: English
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نتایج 11 تا 20 از مجموع 27
1
2
3