Design and Simulation of AlGaN/GaN HEMT
Publish place: 12th National Conference on Electrical Engineering
Publish Year: 1402
نوع سند: مقاله کنفرانسی
زبان: English
View: 95
This Paper With 10 Page And PDF Format Ready To Download
- Certificate
- من نویسنده این مقاله هستم
استخراج به نرم افزارهای پژوهشی:
شناسه ملی سند علمی:
NCEEM12_006
تاریخ نمایه سازی: 30 آبان 1402
Abstract:
HEMT transistors are field-effect transistors formed from the combination of two semiconductors with different energy gaps. Presented here is a simulation of an AlGaN/GaN-based high electron mobility transistor (HEMT) on a sapphire substrate, which was conducted in this work. We used the "SILVACO Software" to simulate the manufacturing process, which was based on "ATLAS" principles and procedures, and we were able to generate the ID-VG, ID-VD, power gain, current gain, polarization charge, transconductance (Gm), conduction band energy, and valence band energy curves as a result.
Authors
Behnam Okhravi
Hakim Sabzevari University, Faculty of Electrical and Computer Engineering, Sabzevar, Iran
Mohsen Ghasemi
Hakim Sabzevari University, Faculty of Electrical and Computer Engineering, Sabzevar, Iran