Design and Simulation of an Ultraviolet GaN LED
Publish place: 12th National Conference on Electrical Engineering
Publish Year: 1402
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
NCEEM12_011
تاریخ نمایه سازی: 30 آبان 1402
Abstract:
This work presents the design and simulation of AlGaN/GaN based UV-A LED on a sapphire substrate. We used periodic layers as multiple-quantum-well to reach better optoelectronic properties and used EBLs to reduce the leakage current in modern multi-quantum-well. We deposited ITO as a top layer and Ni/Au to form ohmic contacts to p-type GaN and approach higher frequency response. We performed simulation by “SILVACO Software” and followed the fabrication process based on “ATHENA” rules and techniques.
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Authors
Behnam Okhravi
Hakim Sabzevari University, Faculty of Electrical and Computer Engineering, Sabzevar, Iran
Mohsen Ghasemi
Hakim Sabzevari University, Faculty of Electrical and Computer Engineering, Sabzevar, Iran